Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact : Light-emitting diodesSONG, June O; HA, Jun-Seok; SEONG, Tae-Yeon et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 1, pp 42-59, issn 0018-9383, 18 p.Article

Low resistance Ni-Zn solid solution/Pd ohmic contacts to p-type GaNSONG, June-O; LEEM, Dong-Seok; SEONG, Tae-Yeon et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 669-672, issn 0268-1242, 4 p.Article

Highly reflective and low resistance indium oxide/Ag ohmic contacts to P-GaN for flip-chip light emitting diodesSONG, June-O; KIM, Sang-Kyun; LEEM, Dong-Seok et al.Proceedings - Electrochemical Society. 2004, pp 236-244, issn 0161-6374, isbn 1-56677-419-5, 9 p.Conference Paper

Improved Light Output of GaN-Based Light-Emitting Diodes by Using AgNi Reflective ContactsJUNG, Se-Yeon; SANG YOUL LEE; SONG, June-O et al.Journal of electronic materials. 2011, Vol 40, Num 11, pp 2173-2178, issn 0361-5235, 6 p.Article

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodotsSONG, June-O; HUN KANG; FERGUSON, I. T et al.Solid-state electronics. 2005, Vol 49, Num 12, pp 1986-1989, issn 0038-1101, 4 p.Article

Low-resistance and thermally stable Pd/Re ohmic contacts to p-type GaNRAJAGOPAL REDDY, V; KIM, Sang-Ho; SONG, June O et al.Semiconductor science and technology. 2003, Vol 18, Num 6, pp 541-544, issn 0268-1242, 4 p.Article

Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting DiodesJAECHEON HAN; GUCHEOL RANG; DAESUNG KANG et al.Journal of electronic materials. 2013, Vol 42, Num 10, pp 2876-2880, issn 0361-5235, 5 p.Article

Enhancement of light output power of GaN-based vertical light emitting diodes by optimizing n-GaN thicknessHWAN HEE JEONG; SANG YOUL LEE; KWANG KI CHOI et al.Microelectronic engineering. 2011, Vol 88, Num 10, pp 3164-3167, issn 0167-9317, 4 p.Article

Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn-Ag interlayerSONG, June-O; KIM, Kyung-Kook; KIM, Hyunsoo et al.Materials science in semiconductor processing. 2007, Vol 10, Num 4-5, pp 211-214, issn 1369-8001, 4 p.Article

Use of an indium zinc oxide interlayer for forming ag-based ohmic contacts to p-type GaN for UV-light-emitting diodesBAN, Keun-Yong; HONG, Hyun-Gi; DO YOUNG NOH et al.Semiconductor science and technology. 2005, Vol 20, Num 9, pp 921-924, issn 0268-1242, 4 p.Article